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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Packaging :
Transistor Polarity :
Collector- Base Voltage VCBO :
Emitter- Base Voltage VEBO :
Gain Bandwidth Product fT :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
DC Collector/Base Gain hfe Min :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Maximum DC Collector Current Gain Bandwidth Product fT Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode DC Collector/Base Gain hfe Min Continuous Collector Current Rise Time Fall Time Transistor Type Product Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Factory packaging quantity unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren DC Current Gain hFE Max
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...   30 V SMD/SMT SC-62-3 - 55 C + 150 C Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel             500 V 12 A 520 mOhms   Enhancement     22 ns 36 ns 1 N-Channel               50      
2SC3709A
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RFQ
8,533
In-stock
Toshiba Semiconductor Bipolar Transistors - BJT           + 150 C           30 W Single   NPN 50 V 60 V 6 V   12 A 90 MHz           120               Transistors              
2SK2998
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RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal 30 V Through Hole TO-92-3 - 55 C + 150 C   1 Channel 5.1 mm 4.1 mm 8.2 mm 900 mW Single Si N-Channel             500 V 500 mA 18 Ohms   Enhancement       11 ns                        
2SK3131
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RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...   30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel 20 mm 5 mm 26 mm 250 W Single Si N-Channel             500 V 50 A 110 mOhms   Enhancement     105 ns 65 ns     51 ns 20 ns   MOSFET            
HUF76143S3
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RFQ
50,000
In-stock
onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch   16 V Through Hole   - 40 C + 150 C Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel             30 V   5.5 mOhms   Enhancement     145 ns, 55 ns 18 ns 1 N-Channel   30 ns, 40 ns 22 ns, 14 ns       0.084199 oz 50 N 75 A  
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET   4 V SMD/SMT     + 150 C   1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel             20 V 180 mA 3 Ohms 400 mV Enhancement         1 N-Channel   300 ns 115 ns                
A1941
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RFQ
8,623
In-stock
Toshiba     Through Hole     + 150 C           100 W Single Si PNP - 140 V - 140 V - 5 V 2 V   30 MHz           35 10 A       BJTs - Bipolar Transistors         4000         83
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