- Vf - Forward Voltage :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Packaging :
- Number of Channels :
- Pd - Power Dissipation :
- Configuration :
- Ir - Reverse Current :
- Transistor Polarity :
- Collector- Base Voltage VCBO :
- Gain Bandwidth Product fT :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Rise Time :
- Transistor Type :
- Package :
- Types of :
- Typical Turn-Off Delay Time :
- Typical Turn-On Delay Time :
- unit weight :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | If - Forward Current | Peak Reverse Voltage | Length | Width | Height | Pd - Power Dissipation | Configuration | Ir - Reverse Current | Ifsm - Forward Surge Current | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | DC Collector/Base Gain hfe Min | Continuous Collector Current | Rise Time | Fall Time | Transistor Type | Product Type | Package | Types of | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Product Category | Factory packaging quantity | unit weight | Factory Pack Quantity | Maximum surge current | RoHS | Id - Continuous Drain Curren | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | range of working temperature | Vrrm - Repeated reverse voltage | Collector-emitter maximum voltage VCEO | Collector - base voltage VCBO | Emitter - base voltage VEBO | Collector continuous current | DC Current Gain hFE Max | |
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GET PRICE |
11,150
In-stock
|
onsemi | MOSFET 30V Dual SyncFET | 16 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Cut Tape | 2 Channel | 4.9 mm | 3.9 mm | 1.75 mm | 2 W | Dual | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | Enhancement | 4.5 ns, 5 ns | 2.5 ns, 11 ns | 2 N-Channel | 20 ns, 25 ns | 7 ns, 8 ns | 2500 | |||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
6,551
In-stock
|
Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | |||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
8,533
In-stock
|
Toshiba Semiconductor | Bipolar Transistors - BJT | + 150 C | 30 W | Single | NPN | 50 V | 60 V | 6 V | 90 MHz | 120 | Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
8,755
In-stock
|
Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns | ||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
23,511
In-stock
|
Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | ||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
13,500
In-stock
|
Shindengen | Bipolar Transistor - Bipolar Junction Transistor (BJT) | + 150 C | NPN | 13 MHz | BJTs - Bipolar Transistors | Transistors | 50 | 2.300 g | N | 45 W | 400 V | 500 V | 7 V | 8 A | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
45,000
In-stock
|
Shindengen | Bridge Rectifier Bridge | 1 V | PDIP-4 | - 40 C | + 150 C | 1 A | 600 V | 10.5 mm | 6.5 mm | 3.1 mm | 10 uA | Reel | Diodes & Rectifiers | Bridge Rectifier | 640 mg | 30 A | ||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
15,600
In-stock
|
Vishay Semiconductors | Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode | Schottky Rectifiers | 0.95 V | - 55 C | + 150 C | 12 A | 6.73 mm | 6.22 mm | 2.39 mm | Dual Common Cathode | 1000 uA | 330 A | Si | Schottky Diodes & Rectifiers | Schottky Diode | Schottky diodes and rectifiers | 2000 | 300 mg | - 55 C to + 150 C | 100 V | ||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
45,000
In-stock
|
Toshiba Semiconductor | MOSFET | 12 V | SMD/SMT | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns | ||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
22,500
In-stock
|
onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | 2500 | 338 mg | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns | |||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
50,000
In-stock
|
onsemi | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | 16 V | Through Hole | - 40 C | + 150 C | Tube | 1 Channel | 6.8 mm | 2.5 mm | 6.3 mm | 225 W | Single | Si | N-Channel | 30 V | 5.5 mOhms | Enhancement | 145 ns, 55 ns | 18 ns | 1 N-Channel | 30 ns, 40 ns | 22 ns, 14 ns | 0.084199 oz | 50 | N | 75 A | ||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
50,050
In-stock
|
Shindengen | Bridge Rectifier Bridge | 1.05 V | DIP SMT | - 40 C | + 150 C | 200 V | 4.7 mm | 3.8 mm | 2.5 mm | 10 uA | Single Phase Bridge | Diodes & Rectifiers | Bridge Rectifier | 30 A | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
45,000
In-stock
|
NXP Semiconductors | Power Factor Correction - PFC Medium Power SSL Driver | - 55 C | + 150 C | MouseReel | PMIC - Power Management ICs | Power Factor Correction - PFC | 2500 | 666 mg | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
40,000
In-stock
|
Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns | ||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
8,623
In-stock
|
Toshiba | Through Hole | + 150 C | 100 W | Single | Si | PNP | - 140 V | - 140 V | - 5 V | 2 V | 30 MHz | 35 | 10 A | BJTs - Bipolar Transistors | 4000 | 83 |