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Transistor Polarity :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Gain Bandwidth Product fT Vds - Drain-Source Breakdown Voltage Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Transistor Type Product Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren Pd-power dissipation Collector-emitter maximum voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO Collector continuous current
2SC4834
Per Unit
$1.200
RFQ
13,500
In-stock
Shindengen Bipolar Transistor - Bipolar Junction Transistor (BJT)       + 150 C                 NPN 13 MHz             BJTs - Bipolar Transistors     Transistors 2.300 g   N   45 W 400 V 500 V 7 V 8 A
HUF76143S3
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RFQ
50,000
In-stock
onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch 16 V Through Hole - 40 C + 150 C Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel   30 V 5.5 mOhms Enhancement 145 ns, 55 ns 18 ns 1 N-Channel   30 ns, 40 ns 22 ns, 14 ns   0.084199 oz 50 N 75 A          
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