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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FD800R17KF6C_B2
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RFQ
12,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 1.3KA IGBT Silicon Modules IHM73 + 125 C   6.25 kW Single 1700 V 2.6 V 1300 A 400 nA
IXGK50N120C3H1
1+
$16.800
10+
$15.450
25+
$14.810
100+
$13.040
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RFQ
IXYS IGBT Modules High Frequency Range 40khz C-IGBT w/Diode IGBT Silicon Modules TO-264-3 + 150 C Tube   Single 1.2 kV 2.6 V 95 A +/- 100 nA
IXGX50N120C3H1
1+
$13.750
10+
$12.650
25+
$12.120
100+
$10.680
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RFQ
IXYS IGBT Modules High Frequency Range 40khz C-IGBT w/Diode IGBT Silicon Modules PLUS247-3 + 150 C     Single 1.2 kV 2.6 V 95 A +/- 100 nA
FD401R17KF6C_B2
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RFQ
14,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 650A IGBT Silicon Modules IHM73 + 125 C   3.1 kW Single 1700 V 2.6 V 650 A 400 nA
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