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18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
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GET PRICE |
78
In-stock
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Infineon Technologies | IGBT Modules 1700V 400A DUAL | - 40 C | + 125 C | Box | 3.3 kW | 1700 V | 2.6 V | 650 A | 400 nA | 20 V | Module | 100% Green available | ||||||
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GET PRICE |
13,500
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 2.9KA | - 40 C | + 125 C | Box | 13.9 kW | 1700 V | 2.6 V | 2900 A | 400 nA | 20 V | Module | 100% Green available | ||||||
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GET PRICE |
13,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.3KA | IGBT Silicon Modules | IHM | + 125 C | 6.25 W | Dual | 1700 V | 2.6 V | 1300 A | 400 nA | ||||||||
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GET PRICE |
13,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 2.6KA | IGBT Silicon Modules | IHM | + 125 C | Bulk | 12.5 kW | Dual Common Emitter Common Gate | 1700 V | 2.6 V | 2600 A | 400 nA | |||||||
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187
In-stock
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STMicroelectronics | IGBT Modules IGBT & Power Bipolar | IGBT Silicon Modules | NDIP-26L | + 150 C | Bulk | 8 W | 3-Phase Inverter | 600 V | 2.6 V | 3 A | |||||||||
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80
In-stock
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Infineon Technologies | IGBT Modules 1700V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 3.12 kW | Single Dual Emitter | 1700 V | 2.6 V | 800 A | 200 nA | |||||||||
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GET PRICE |
12,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.3KA | IGBT Silicon Modules | IHM73 | + 125 C | 6.25 kW | Single | 1700 V | 2.6 V | 1300 A | 400 nA | ||||||||
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30
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.95KA | IGBT Silicon Modules | IHM130 | + 125 C | 9.6 kW | Dual Common Emitter Common Gate | 1700 V | 2.6 V | 1950 A | 400 nA | |||||||||
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40
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 975A | IGBT Silicon Modules | IHM | + 125 C | 4.8 kW | Dual | 1700 V | 2.6 V | 975 A | 400 nA | |||||||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA | |||||||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | PLUS247-3 | + 150 C | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA | ||||||||||
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383
In-stock
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Infineon Technologies | IGBT Modules 1700V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 960 W | Dual | 1700 V | 2.6 V | 200 A | 200 nA | |||||||||
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365
In-stock
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Infineon Technologies | IGBT Modules 1700V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1700 V | 2.6 V | 300 A | 200 nA | |||||||||
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25,000
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2250 W | Single Dual Emitter | 1200 V | 2.6 V | 570 A | 400 nA | |||||||||
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4
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 650A | IGBT Silicon Modules | IHM | + 125 C | 3.1 kW | Dual | 1700 V | 2.6 V | 650 A | 400 nA | |||||||||
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GET PRICE |
14,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 650A | IGBT Silicon Modules | IHM73 | + 125 C | 3.1 kW | Single | 1700 V | 2.6 V | 650 A | 400 nA | ||||||||
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240
In-stock
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Infineon Technologies | IGBT Modules 1700V 200A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1660 W | Dual | 1700 V | 2.6 V | 400 A | 400 nA | |||||||||
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30
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 3.8KA | IGBT Silicon Modules | IHM190 | + 125 C | 19.2 kW | Triple Common Emitter Common Gate | 1700 V | 2.6 V | 3800 A | 400 nA |