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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,137
In-stock
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onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | ||||
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7,300
In-stock
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onsemi | IGBT Transistors FSII 40A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 535 W | Single | 1.2 kV | 2 V | 80 A | 200 nA | +/- 20 V | ||||
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GET PRICE |
9,800
In-stock
|
onsemi | IGBT Transistors 1200V/40A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2 V | 80 A | 200 nA | 30 V |