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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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116
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 10-30kHz | Through Hole | TO-220-3 | Tube | 89 W | Single | 1.2 kV | 2 V | 12 A | +/- 20 V | ||||||
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90
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 89 W | Single | 1200 V | 1.7 V | 15 A | 100 nA | 30 V | ||||
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188
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 89 W | Single | 1200 V | 1.7 V | 15 A | 100 nA | 30 V |