IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXA45IF1200HB	1+ $10.450 10+ $9.440 25+ $9.000 100+ $7.820	PDF RFQ	90 In-stock	IXYS	IGBT Transistors N-Channel: Power MOSFET w/Fast Diode	Through Hole	TO-247-3	+ 150 C	Tube	325 W	Single	1200 V	1.8 V	78 A	500 nA	20 V
IRGP4263DPBF	1+ $8.490 10+ $7.670 25+ $7.310 50+ $6.810	PDF RFQ	130 In-stock	IR / Infineon	IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT	Through Hole	TO-247AC-3	+ 175 C	Tube	325 W	Single	650 V	1.7 V	90 A	100 nA	20 V
IRGP4760D-EPBF	1+ $7.540 10+ $6.810 25+ $6.500 100+ $5.640	PDF RFQ	15,000 In-stock	IR / Infineon	IGBT Transistors IGBT DISCRETES	Through Hole	TO-247AD-3	+ 175 C	Tube	325 W	Single	650 V	1.7 V	90 A	+/- 100 nA	+/- 20 V