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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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230
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | |||
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74
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | |||
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61
In-stock
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IXYS | IGBT Transistors 28 Amps 600V | Through Hole | TO-247 | + 150 C | Tube | 190 W | Single | 600 V | 1.5 V | 66 A | +/- 100 nA | ||||
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30
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 2.7 V | 32 A | 100 nA | +/- 20 V | |||
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23
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 2.7 V | 32 A | 100 nA | +/- 20 V | |||
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7
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 4.2 V | 16 A | 100 nA | +/- 20 V | |||
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30
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 5 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 4.2 V | 16 A | 100 nA | +/- 20 V |
