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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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795
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors Trench gate H series 600V 10A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.5 V | 20 A | 250 nA | +/- 20 V | ||||
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630
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Trench for IPL Application | Through Hole | TO-220F | + 150 C | Tube | 30 W | 650 V | 1.88 V | 170 A | 400 nA | 25 V |