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- Mounting Style :
- Package / Case :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,474
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 14 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 70 W | Single | 600 V | 2.5 V | 25 A | +/- 100 nA | +/- 20 V | ||||
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267
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 8A | Through Hole | TO-247-3 | + 150 C | Tube | 70 W | Single | 1200 V | 2.2 V | 16 A | 100 nA | 20 V | ||||
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500
In-stock
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Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-220-3 | + 175 C | 70 W | Single | 650 V | 1.95 V | 18 A | 100 nA | 20 V | |||||
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500
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 70 W | Single | 650 V | 1.95 V | 18 A | 100 nA | 20 V | ||||
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160
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 8A | Through Hole | TO-247-3 | + 150 C | Tube | 70 W | Single | 1200 V | 2.2 V | 16 A | 100 nA | 20 V | ||||
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500
In-stock
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Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-220-3 | + 175 C | Tube | 70 W | Single | 650 V | 1.9 V | 18 A | 100 nA | 20 V | ||||
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334
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 70 W | Single | 650 V | 1.9 V | 18 A | 100 nA | 20 V |