- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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435
In-stock
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Fairchild Semiconductor | IGBT Transistors Shorted AnodeTM IGBT | Through Hole | TO-3PN | + 175 C | Tube | 174 W | Single | 1300 V | 2.3 V | 60 A | 500 nA | 25 V | ||||
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450
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 25A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 174 W | 650 V | 1.65 V | 48 A | +/- 200 nA | +/- 30 V | |||||
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431
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 25A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 174 W | 650 V | 1.6 V | 50 A | +/- 200 nA | +/- 30 V | |||||
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437
In-stock
|
ROHM Semiconductor | IGBT Transistors 650V 25A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 174 W | 650 V | 1.6 V | 50 A | +/- 200 nA | +/- 30 V |