- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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In-stock
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IXYS | IGBT Transistors High Voltage High Gain BIMOSFET | Through Hole | ISOPLUS i4-Pak-3 | + 150 C | 357 W | Single | 3 kV | 2.7 V | 86 A | +/- 200 nA | +/- 25 V | ||||
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VIEW | IXYS | IGBT Transistors 26 Amps 1700V 3.5 V Rds | Through Hole | ISOPLUS i4-Pak-3 | + 150 C | Tube | 200 W | Single | 1.7 kV | 2.7 V | 44 A | 100 nA | +/- 20 V |
