- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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630
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Trench for IPL Application | Through Hole | TO-220F | + 150 C | Tube | 30 W | 650 V | 1.88 V | 170 A | 400 nA | 25 V | |||||
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76
In-stock
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IXYS | IGBT Transistors 650V/170A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 650 V | 1.8 V | 170 A | 100 nA | 30 V | ||||
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30
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V | ||||
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32
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked | Through Hole | TO-264 | + 150 C | Tube | 695 W | 600 V | 2.2 V | 170 A | 100 nA | 20 V | |||||
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35
In-stock
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IXYS | IGBT Transistors 650V/170A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 650 V | 1.8 V | 170 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | PLUS 247-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V |