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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGX120N60A3
1+
$13.650
10+
$12.550
25+
$12.030
100+
$10.600
RFQ
243
In-stock
IXYS IGBT Transistors 120 Amps 600V Through Hole PLUS 247-3 + 150 C Tube 780 W Single 600 V 1.2 V 200 A 400 nA +/- 20 V
APT75GN120LG
1+
$16.210
10+
$14.740
25+
$13.630
50+
$12.890
RFQ
105
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... Through Hole TO-264-3 + 150 C   833 W Single 1.2 kV 1.7 V 200 A 600 nA 30 V
IXGH36N60B3D1
1+
$6.010
10+
$5.430
25+
$5.180
100+
$4.500
RFQ
63
In-stock
IXYS IGBT Transistors 36 Amps 600V Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.8 V 200 A +/- 100 nA +/- 20 V
IXyH100N65C3
1+
$8.040
10+
$7.270
25+
$6.930
100+
$6.020
RFQ
98
In-stock
IXYS IGBT Transistors 650V/200A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 830 W Single 650 V 1.85 V 200 A 100 nA 30 V
NGTB50N120FL2WAG
1+
$5.480
10+
$4.660
100+
$4.040
250+
$3.830
RFQ
30
In-stock
onsemi IGBT Transistors 1200V/50 FAST IGBT FSII T Through Hole TO-247-4 + 175 C Tube 268 W   1200 V 2.8 V 200 A 200 nA 20 V
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