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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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272
In-stock
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IR / Infineon | IGBT Transistors 600V DC-1kHz | Through Hole | TO-247-3 | Tube | 100 W | Single | 600 V | 1.6 V | 34 A | +/- 20 V | ||||||
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363
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 1.4 V | 34 A | 100 nA | +/- 20 V | ||||
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198
In-stock
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IR / Infineon | IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | Reel | 100 W | 600 V | 1.6 V | 34 A | ||||||||
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18
In-stock
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IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | Tube | 150 W | Single | 3 kV | 2.7 V | 34 A | +/- 20 V | |||||
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300
In-stock
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Infineon Technologies | IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | Tube | 100 W | Single | 600 V | 1.6 V | 34 A | +/- 20 V | ||||||
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13
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Screw | SOT-227-4 | + 150 C | 329 W | N-Channel | 1.2 kV | 3.3 V | 34 A | 100 nA | +/- 20 V | |||||
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VIEW | IR / Infineon | IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | Reel | 100 W | 600 V | 1.6 V | 34 A |