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- Maximum Operating Temperature :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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916
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 20A Field Stop | Through Hole | TO-263AB | Reel | 83 W | 600 V | 2.8 V | 40 A | 400 nA | 20 V | ||||||
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1,853
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 1200 Volt 3 Amp | Through Hole | TO-220-3 FP | + 150 C | Tube | 25 W | Single | 1200 V | 2.8 V | 6 A | +/- 100 nA | +/- 20 V | ||||
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456
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | |||||
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97
In-stock
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IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | |||||
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40
In-stock
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IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 40 A | +/- 100 nA | +/- 20 V | |||||
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40
In-stock
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IXYS | IGBT Transistors | SMD/SMT | TO-268-2 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | |||||
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154
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-220-3 | Tube | 60 W | Single | 600 V | 2.8 V | 16 A | +/- 20 V | ||||||
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144
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | |||||
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500
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-220FP-3 | Tube | 34 W | Single | 600 V | 2.8 V | 11.5 A | +/- 20 V | ||||||
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30
In-stock
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onsemi | IGBT Transistors 1200V/50 FAST IGBT FSII T | Through Hole | TO-247-4 | + 175 C | Tube | 268 W | 1200 V | 2.8 V | 200 A | 200 nA | 20 V | |||||
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VIEW | IXYS | IGBT Transistors 20 Amps 1200V | SMD/SMT | TO-263-3 | + 150 C | Reel | Single | 1200 V | 2.8 V | +/- 20 V |