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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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26
In-stock
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Infineon Technologies | IGBT Modules N-CH 3.3KV 1.5KA | IGBT Silicon Modules | IHVB190 | + 150 C | Triple | 3300 V | 1500 A | ||||||
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24
In-stock
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Fairchild Semiconductor | IGBT Modules High Power Module | IGBT Silicon Modules | F2 | + 150 C | Tray | 156 W | Triple | 650 V | 1.55 V | 40 A | 2 uA | |||
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152
In-stock
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Fairchild Semiconductor | IGBT Modules High Power Module | IGBT Silicon Modules | F2 | + 150 C | Tray | 98 W, 140 W, 156 W | Triple | 650 V | 1.55 V | 40 A | +/- 2 uA |
