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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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12,300
In-stock
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Infineon Technologies | IGBT Modules N-CH 600V 550A | IGBT Silicon Modules | Econo D | + 150 C | Dual | 600 V | 550 A | ||||||
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VIEW | Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Econo D | + 150 C | 1050 W | Dual | 1200 V | 2.15 V | 295 A | 400 nA |
