- Package / Case :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
151
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 1400A 1700V | IGBT Silicon Modules | + 150 C | 9.55 kW | 1700 V | 2.2 V | 1400 A | 400 nA | |||||
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153
In-stock
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STMicroelectronics | IGBT Modules SLLIMM IPM 3-Phase 30A 600V IGBT | IGBT Silicon Modules | SDIP-25L | + 150 C | Tube | 52 W | Single | 600 V | 2.2 V | 30 A | ||||
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104
In-stock
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STMicroelectronics | IGBT Modules 600V 20A SLIMM 3-Ph Trench Gate IGBT | IGBT Silicon Modules | SDIP-25 | + 150 C | Tube | 52 W | 3-Phase | 600 V | 2.2 V | 30 A | ||||
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GET PRICE |
14,800
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 100A | IGBT Silicon Modules | Econo 3 | + 150 C | 515 W | Hex | 1200 V | 2.2 V | 100 A | 100 nA | |||
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57
In-stock
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Fairchild Semiconductor | IGBT Modules 600V 15A Inverter for Mocion control | IGBT Silicon Modules | SPM27-JA | + 150 C | Tube | 25 W | 3-Phase | 600 V | 2.2 V | 15 A | 1 mA | |||
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89
In-stock
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Fairchild Semiconductor | IGBT Modules Smart Power Module | IGBT Silicon Modules | SPM27-JA | + 150 C | Tube | 25 W | 3-Phase | 600 V | 2.2 V | 15 A | 1 mA | |||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.2 kV | 2.2 V | 70 A | +/- 100 nA |
