- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
40,000
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 75A | IGBT Silicon Modules | + 150 C | 395 W | Dual | 1200 V | 2.15 V | 75 A | 100 nA | |||
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12
In-stock
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Infineon Technologies | IGBT Modules 600V 50A DUAL | IGBT Silicon Modules | 34MM | + 125 C | 280 W | Dual | 600 V | 2.2 V | 75 A | 400 nA |
