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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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19,000
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | Module | + 150 C | 160 W | 3-Phase | 1200 V | 1.85 V | 25 A | 100 nA | ||||
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VIEW | Fairchild Semiconductor | IGBT Modules 600V -25A SPM | IGBT Silicon Modules | SPMBA-027 | + 125 C | Tube | 29 W | 3-Phase | 600 V | 2.15 V | 25 A |