4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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80
In-stock
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Infineon Technologies | IGBT Modules 1700V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 3.12 kW | Single Dual Emitter | 1700 V | 2.6 V | 800 A | 200 nA | |||||
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100
In-stock
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Infineon Technologies | IGBT Modules 900V 300A IGBT MODULE | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1700 V | 600 A | ||||||||
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GET PRICE |
19,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 620A | IGBT Silicon Modules | 62 mm | + 125 C | Tray | Single Dual Emitter | 1700 V | 620 A | ||||||
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61
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 400A | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1700 V | 400 A |