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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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GET PRICE |
11,200
In-stock
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Infineon Technologies | IGBT Modules 1700V 50A 500W HALF-BRIDGE | IGBT Silicon Modules | Half Bridge1 | + 150 C | 500 W | Half Bridge | 1700 V | 3.4 V | 72 A | 320 nA | ||
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13,600
In-stock
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Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 320 nA |
