- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
114
In-stock
|
IXYS | IGBT Modules 60 Amps 600V | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | 380 W | 600 V | 75 A | 100 nA | |||||
|
|
30
In-stock
|
IXYS | IGBT Modules High Voltage IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 2.5 kV | 4.6 V | 13 A | +/- 100 nA | ||||
|
|
44
In-stock
|
IXYS | IGBT Modules 48 Amps 600V | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | 300 W | Single | 600 V | 100 nA | |||||
|
|
45
In-stock
|
IXYS | IGBT Modules 30 Amps 600V | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | 220 W | Single | 600 V | 60 A | 100 nA | ||||
|
|
VIEW | IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | ||||
|
|
VIEW | IXYS | IGBT Modules GenX3 600V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 600 V | 1.59 V | 400 A | +/- 100 nA | ||||
|
|
VIEW | IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 600 V | 1.49 V | 350 A | +/- 100 nA |
