- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
15,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | PRIME2 | + 150 C | Dual | 1200 V | 600 A | |||||
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16,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 600A | IGBT Silicon Modules | PRIME2 | + 150 C | 3.35 kW | Dual | 1200 V | 2.1 V | 600 A | 400 nA | |||
|
|
GET PRICE |
26,100
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 600A | IGBT Silicon Modules | EconoDUAL-3 | + 125 C | 2100 W | Dual | 1200 V | 1.7 V | 600 A | 400 nA | ||
|
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88
In-stock
|
Infineon Technologies | IGBT Modules 1200V 450A 3-PHASE | IGBT Silicon Modules | EconoPACK+ | + 125 C | 2100 W | Hex | 1200 V | 2.15 V | 600 A | 400 nA | |||
|
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61
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1700V 450A | IGBT Silicon Modules | + 150 C | 2500 W | Dual | 1700 V | 2.3 V | 600 A | 400 nA | ||||
|
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100
In-stock
|
Infineon Technologies | IGBT Modules 900V 300A IGBT MODULE | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1700 V | 600 A | ||||||
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3
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 600A | IGBT Silicon Modules | + 150 C | 3.35 kW | 1200 V | 2.05 V | 600 A | 400 nA |
