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- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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76
In-stock
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IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-220AB-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | |||||
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90
In-stock
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Infineon Technologies | IGBT Modules 1200V 35A PIM | IGBT Silicon Modules | EconoPIM2 | + 125 C | 230 W | Hex | 1200 V | 2.4 V | 45 A | 300 nA | |||||
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48
In-stock
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Fairchild Semiconductor | IGBT Modules 600V -75A SMART POWER MODULE | IGBT Silicon Modules | SPM32-AA | + 125 C | Tube | 189 W | 3-Phase | 600 V | 2.4 V | 75 A | 250 uA | ||||
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VIEW | IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | |||||
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13,600
In-stock
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Infineon Technologies | IGBT Modules 1200V 35A PIM | IGBT Silicon Modules | EconoPIM3 | + 125 C | 230 W | Hex | 1200 V | 2.4 V | 45 A | 300 nA | |||||
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63
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A DUAL | IGBT Silicon Modules | 34MM | + 125 C | 460 W | Dual | 1200 V | 2.4 V | 115 A | 400 nA | |||||
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162
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A 3-PHASE | IGBT Silicon Modules | EconoPACK 2A | + 125 C | Bulk | 350 W | Hex | 1200 V | 2.4 V | 85 A | 400 nA | ||||
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18,600
In-stock
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Infineon Technologies | IGBT Modules 1200V 10A PIM | IGBT Silicon Modules | EconoPIM2 | + 125 C | Tray | 100 W | Hex | 1200 V | 2.4 V | 20 A | 300 nA | |||
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14,500
In-stock
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Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | 34MM | + 125 C | Tray | 690 W | Dual | 1200 V | 2.4 V | 170 A | 400 nA |