- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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151
In-stock
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1200 V | 3.2 V | 225 A | 400 nA | |||
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80
In-stock
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Infineon Technologies | IGBT Modules 1200V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 3A | + 125 C | 500 W | Hex | 1200 V | 3.2 V | 100 A | 400 nA | ||||
|
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154
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 780 W | Dual | 1200 V | 3.2 V | 150 A | 400 nA | |||
|
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251
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 700A | IGBT Silicon Modules | 62 mm | + 125 C | 3900 W | Single | 1200 V | 3.2 V | 700 A | 400 nA | |||
|
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14,200
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A 3-PHASE | IGBT Silicon Modules | EconoPACK 3A | + 125 C | 660 W | Hex | 1200 V | 3.2 V | 130 A | 400 nA | |||
|
GET PRICE |
136
In-stock
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Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.4 kW | Dual | 1200 V | 3.2 V | 275 A | 400 nA | |||
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VIEW | Infineon Technologies | IGBT Modules 1200V 35A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 280 W | Half Bridge | 1200 V | 3.2 V | 50 A | 150 nA |