- Package / Case :
- Configuration :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
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GET PRICE |
230
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A CHOPPER | + 150 C | Box | 800 W | 1200 V | 2.5 V | 150 A | 400 nA | 20 V | Module | 100% Green available | ||||||
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15
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A CHOPPER | IGBT Silicon Modules | Half Bridge GAL 1 | + 150 C | Tray | 400 W | Half Bridge | 1200 V | 2.5 V | 78 A | 400 nA | |||||||
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3,200
In-stock
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Infineon Technologies | IGBT Modules 1200V 75A CHOPPER | IGBT Silicon Modules | Half Bridge GAL 1 | + 150 C | Tray | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 400 nA | |||||||
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39
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A FL BRIDGE | IGBT Silicon Modules | EconoPACK 3A | + 150 C | 680 W | Hex | 1200 V | 2.5 V | 150 A | 400 nA | ||||||||
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63
In-stock
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Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.4 kW | Half Bridge | 1200 V | 2.5 V | 290 A | 400 nA | ||||||||
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19,500
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 700 W | Half Bridge | 1200 V | 2.5 V | 145 A | 400 nA |