- Pd - Power Dissipation :
- Configuration :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
27
In-stock
|
Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Module | + 150 C | 71.5 W | IGBT-Inverter | 600 V | 1.55 V | 25 A | 400 nA | ||||
|
11
In-stock
|
Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Module | + 150 C | 65 W | IGBT-Inverter | 600 V | 1.55 V | 22 A | 400 nA | ||||
|
10
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 75A 650V | IGBT Silicon Modules | Module | + 150 C | 250 W | IGBT-Inverter | 650 V | 1.55 V | 75 A | 400 nA | ||||
|
GET PRICE |
18,400
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 400A 650V | IGBT Silicon Modules | Module | + 150 C | 1250 W | IGBT-Inverter | 650 V | 1.55 V | 485 A | 400 nA | |||
|
VIEW | Infineon Technologies | IGBT Modules IGBT 600V 15A | IGBT Silicon Modules | Module | + 150 C | 71.5 W | IGBT-Inverter | 600 V | 1.55 V | 22 A | 400 nA | ||||
|
24
In-stock
|
Infineon Technologies | IGBT Modules IGBT MODULES 600V 30A | IGBT Silicon Modules | Module | + 150 C | 150 W | 3-Phase | 600 V | 1.55 V | 45 A | 400 nA |