- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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110
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 100A | IGBT Silicon Modules | Econo 3 | + 125 C | 455 W | Hex | 1200 V | 2.15 V | 100 A | 400 nA | |||
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7
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 100A 650V | IGBT Silicon Modules | + 150 C | 335 W | 650 V | 1.95 V | 100 A | 400 nA | |||||
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80
In-stock
|
Infineon Technologies | IGBT Modules 1200V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 3A | + 125 C | 500 W | Hex | 1200 V | 3.2 V | 100 A | 400 nA | |||
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16,000
In-stock
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Infineon Technologies | IGBT Modules 600V 75A DUAL | IGBT Silicon Modules | 34MM | + 125 C | 355 W | Dual | 600 V | 2.2 V | 100 A | 400 nA | |||
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120
In-stock
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Infineon Technologies | IGBT Modules ECONO PACK 3 WITH FAST TRENCH | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Hex | 600 V | 1.9 V | 100 A | 400 nA |
