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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FF300R12KT4
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RFQ
278
In-stock
Infineon Technologies IGBT Modules IGBT 1200V 300A IGBT Silicon Modules 62 mm + 150 C Tray 1600 W Dual 1200 V 2.1 V 450 A 400 nA
FF150R12KT3G
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RFQ
12,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 225A IGBT Silicon Modules 62 mm + 125 C Tray 780 W Dual 1200 V 2.15 V 225 A 400 nA
FF300R07KE4
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RFQ
18,100
In-stock
Infineon Technologies IGBT Modules IGBT Module 300A 650V IGBT Silicon Modules 62 mm + 150 C Tray 940 W Dual 650 V 1.75 V 365 A 400 nA
BSM300GA120DN2
1+
$152.530
5+
$149.530
10+
$142.560
25+
$139.570
RFQ
110
In-stock
Infineon Technologies IGBT Modules 1200V 300A SINGLE IGBT Silicon Modules 62 mm + 150 C Tray 2500 W Single 1200 V 2.5 V 430 A 320 nA
FF150R12KE3G
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RFQ
19,100
In-stock
Infineon Technologies IGBT Modules 1200V 150A DUAL IGBT Silicon Modules 62 mm + 125 C Tray 780 W Dual 1200 V 1.7 V 225 A 400 nA
FZ400R17KE3
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RFQ
19,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 620A IGBT Silicon Modules 62 mm + 125 C Tray   Single Dual Emitter 1700 V   620 A  
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