- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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278
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 300A | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 1600 W | Dual | 1200 V | 2.1 V | 450 A | 400 nA | |||
|
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12,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 225A | IGBT Silicon Modules | 62 mm | + 125 C | Tray | 780 W | Dual | 1200 V | 2.15 V | 225 A | 400 nA | |||
|
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18,100
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 300A 650V | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 940 W | Dual | 650 V | 1.75 V | 365 A | 400 nA | |||
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110
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 2500 W | Single | 1200 V | 2.5 V | 430 A | 320 nA | ||||
|
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19,100
In-stock
|
Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | Tray | 780 W | Dual | 1200 V | 1.7 V | 225 A | 400 nA | |||
|
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19,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 620A | IGBT Silicon Modules | 62 mm | + 125 C | Tray | Single Dual Emitter | 1700 V | 620 A |