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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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GET PRICE |
15,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 50A | IGBT Silicon Modules | Econo 3 | + 150 C | Tray | 280 W | 3-Phase | 1200 V | 2.25 V | 50 A | 100 nA | ||
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14
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | + 150 C | Tray | 175 W | 1200 V | 2.25 V | 39 A | 400 nA |
