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- Package / Case :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
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68
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A 6-PACK | - 40 C | + 150 C | Box | 2 kW | 1200 V | 2.7 V | 300 A | 400 nA | 20 V | Module | 100% Green available | ||||||
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182
In-stock
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Infineon Technologies | IGBT Modules 1200V 600A DUAL | - 40 C | + 150 C | Box | 3.9 kW | 1200 V | 2.7 V | 600 A | 20 V | Module | 100% Green available | ||||||||
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GET PRICE |
185
In-stock
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Infineon Technologies | IGBT Modules 1200V 400A DUAL | - 40 C | + 150 C | Box | 2.7 kW | 1200 V | 2.7 V | 400 A | 400 nA | 20 V | Module | 100% Green available | ||||||
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49
In-stock
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IXYS | IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode | IGBT Silicon Modules | SOT-227 | + 150 C | Tube | Single | 900 V | 2.7 V | 115 A | 100 nA | |||||||||
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8
In-stock
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IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | IGBT Silicon Modules | SOT-227B-4 | + 150 C | Tube | Single | 1.2 kV | 2.7 V | 145 A | +/- 200 nA | |||||||||
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2
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 15A | IGBT Silicon Modules | EconoPACK 2 | + 150 C | Tray | 80 W | Hex | 1200 V | 2.7 V | 15 A | 120 nA | ||||||||
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179
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 50A | IGBT Silicon Modules | EconoPACK 2 | + 150 C | Bulk | 280 W | Hex | 1200 V | 2.7 V | 50 A | 150 nA | ||||||||
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VIEW | Infineon Technologies | IGBT Modules 1200V 10A FL BRIDGE | IGBT Silicon Modules | EconoPACK 2 | + 150 C | Bulk | 80 W | Hex | 1200 V | 2.7 V | 15 A | 120 nA |