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- Configuration :
- Gate-Emitter Leakage Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | Factory Pack Quantity | RoHS | |
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352
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 75A | Tray | 385 W | 3-Phase Inverter | 1.2 kV | 1.85 V | 75 A | 100 nA | 20 V | Module | 10 | Green available | ||||||
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21
In-stock
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IXYS | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 1.85 V | 125 A | +/- 100 nA |
