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Package / Case :
Maximum Operating Temperature :
Packaging :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Package Factory Pack Quantity RoHS
CM1200DC-34N
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RFQ
185
In-stock
Mitsubishi Electric IGBT Modules N -Series       Box 6.5 kW Dual 1.7 kV 2.15 V 1.2 kA 500 nA 20 V Module 5 Green available
FF400R12KT3
1+
$146.000
5+
$144.000
10+
$137.000
25+
$134.000
RFQ
350
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 580A IGBT Silicon Modules 62 mm + 125 C   2000 W Dual 1200 V 2.15 V 580 A 400 nA        
FF150R12KT3G
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RFQ
12,000
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 225A IGBT Silicon Modules 62 mm + 125 C Tray 780 W Dual 1200 V 2.15 V 225 A 400 nA        
FF300R12KE4
Per Unit
$89.000
RFQ
165
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 460A IGBT Silicon Modules 62 mm + 150 C   1600 W Dual 1200 V 2.15 V 460 A 400 nA        
FF75R12RT4
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RFQ
40,000
In-stock
Infineon Technologies IGBT Modules IGBT 1200V 75A IGBT Silicon Modules   + 150 C   395 W Dual 1200 V 2.15 V 75 A 100 nA        
FF200R12MT4
504+
$85.880
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RFQ
Infineon Technologies IGBT Modules IGBT-MODULE IGBT Silicon Modules Econo D + 150 C   1050 W Dual 1200 V 2.15 V 295 A 400 nA        
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