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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Configuration Mounting Type Operating Temperature Part Status Supplier Device Package Input Factory Stock Minimum Quantity Power - Max Reverse Recovery Time (trr) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Cutoff (Max) Input Capacitance (Cies) @ Vce NTC Thermistor Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
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Infineon Technologies IGBT 1200V ULTRA FAST DIE Die - Bulk   Surface Mount -40°C ~ 175°C (TJ) Obsolete Die   0 0 - - 1200V - 2V @ 15V, 75A       - - 540nC 90ns/580ns 600V, 75A, 5 Ohm, 15V
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Infineon Technologies IGBT 650V TO-247 TO-247-3 - Tube   Through Hole -40°C ~ 175°C (TJ) Obsolete TO-247AC   0 25 455W - 650V 140A 2V @ 15V, 75A       225A 2.5mJ (on), 2.2mJ (off) 210nC 50ns/200ns 400V, 75A, 10 Ohm, 15V
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Infineon Technologies IGBT 650V TO-247 TO-247-3 - Tube   Through Hole -40°C ~ 175°C (TJ) Obsolete TO-247AD   0 25 455W - 650V 140A 2V @ 15V, 75A       225A 2.5mJ (on), 2.2mJ (off) 210nC 50ns/200ns 400V, 75A, 10 Ohm, 15V
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Infineon Technologies IGBT 650V TO-247 TO-247-3 - Tube   Through Hole -40°C ~ 175°C (TJ) Obsolete TO-247AC   0 25 455W 170ns 650V 140A 2V @ 15V, 75A       225A 2.5mJ (on), 2.2mJ (off) 210nC 50ns/200ns 400V, 75A, 10 Ohm, 15V
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Infineon Technologies IGBT 650V TO-247 TO-247-3 - Tube   Through Hole -40°C ~ 175°C (TJ) Obsolete TO-247AD   0 400 455W 170ns 650V 140A 2V @ 15V, 75A       225A 2.5mJ (on), 2.2mJ (off) 210nC 50ns/200ns 400V, 75A, 10 Ohm, 15V
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$8.120
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Infineon Technologies IGBT CHIP WAFER Die - Bulk   Surface Mount -40°C ~ 175°C (TJ) Active Die   0 580 - - 1200V 75A 2V @ 15V, 75A       - - 480nC 80ns/210ns 600V, 75A, 1.5 Ohm, 15V
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Infineon Technologies MOD IGBT 1200V 75A POWIR 34 POWIR® 34 Module -   Half Bridge Chassis Mount -40°C ~ 150°C (TJ) Obsolete POWIR® 34 Standard 0 20 450W   1200V 150A 2V @ 15V, 75A 1mA 7nF @ 25V No          
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