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Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FP35R12KT4
1+
$73.010
5+
$71.670
10+
$69.820
25+
$68.450
RFQ
160
In-stock
Infineon Technologies IGBT Modules IGBT-MODULE IGBT Silicon Modules Econo 2 + 150 C Bulk   Hex 1200 V   35 A  
FP35R12KT4_B15
1+
$73.010
5+
$71.670
10+
$69.820
25+
$68.450
RFQ
7
In-stock
Infineon Technologies IGBT Modules IGBT 1200V 35A IGBT Silicon Modules   + 150 C   210 W   1200 V 2.15 V 35 A 100 nA
Default Photo
1+
$74.020
5+
$72.660
10+
$70.780
25+
$69.390
RFQ
7
In-stock
Infineon Technologies IGBT Modules IGBT-MODULE IGBT Silicon Modules Econo 2 + 150 C Bulk   Hex 1200 V   35 A  
BSM15GD120DLCE3224
1+
$64.450
5+
$63.000
10+
$60.540
25+
$58.590
RFQ
65
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 35A IGBT Silicon Modules EconoPACK 2A + 125 C Reel 145 W Hex 1200 V 2.1 V 35 A 400 nA
BSM15GP120
1+
$77.630
5+
$75.040
10+
$69.870
RFQ
440
In-stock
Infineon Technologies IGBT Modules 1200V 15A PIM IGBT Silicon Modules EconoPIM2 + 125 C   180 W Hex 1200 V 2.2 V 35 A 300 nA
BSM25GD120DN2E3224
1+
$150.000
RFQ
268
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 35A IGBT Silicon Modules EconoPACK 2 + 150 C   200 W Hex 1200 V 2.5 V 35 A 180 nA
BSM25GD120DN2
1+
$150.000
RFQ
168
In-stock
Infineon Technologies IGBT Modules 1200V 25A FL BRIDGE IGBT Silicon Modules EconoPACK 2A + 150 C   200 W Hex 1200 V 2.5 V 35 A 180 nA
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