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Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Collector-Emitter Saturation Voltage :
Maximum DC Collector Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Series Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Maximum DC Collector Current Gain Bandwidth Product fT
HN1A01F-GR(TE85L,F
1+
$0.380
10+
$0.216
100+
$0.093
1000+
$0.071
3000+
$0.054
RFQ
4,840
In-stock
Toshiba Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A SMD/SMT SM-6 + 125 C HN1A01 Dual PNP 50 V 5 V 0.1 V 150 mA 80 MHz
HN1A01FU-Y
5+
$0.300
245+
$0.200
RFQ
58,900
In-stock
Toshiba Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1... SMD/SMT US-6   HN1A01   PNP - 50 V - 5 V - 0.1 V - 150 mA 80 MHz
HN1A01F-Y(TE85L,F)
1+
$0.540
10+
$0.303
100+
$0.130
1000+
$0.100
3000+
$0.076
RFQ
2,843
In-stock
Toshiba Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A SMD/SMT SOT-26-6 + 125 C HN1A01 Dual PNP 50 V 5 V 0.1 V 150 mA 80 MHz
HN1A01FE-GR,LF
1+
$0.350
10+
$0.231
100+
$0.097
1000+
$0.066
4000+
$0.050
RFQ
3,880
In-stock
Toshiba Bipolar Transistors - BJT Bias Resistor Built-in transistor SMD/SMT ES6-6   HN1A01   PNP - 50 V - 5 V - 0.3 V - 150 mA 80 MHz
HN1A01FE-Y,LF
1+
$0.380
10+
$0.216
100+
$0.092
1000+
$0.071
4000+
$0.061
VIEW
RFQ
Toshiba Bipolar Transistors - BJT ES6 PLN SMD/SMT ES6-6   HN1A01   PNP - 50 V - 5 V - 0.1 V - 150 mA 80 MHz
HN1A01FU-GR,LF
1+
$0.280
10+
$0.185
100+
$0.077
1000+
$0.053
3000+
$0.040
VIEW
RFQ
Toshiba Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp       HN1A01              
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