- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Length :
- Width :
- Height :
- Technology :
- Rds On - Drain-Source Resistance :
- Rise Time :
- Fall Time :
- Installation style :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Input Type | Output Current per Channel | Ib - Input Bias Current | Vcm - Common Mode Voltage | CMRR - Common Mode Rejection Ratio | Voltage Gain dB | Amplifier Type | en - Input Voltage Noise Density | Rise Time | Fall Time | Transistor Type | Package | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Power supply voltage - maximum | Power supply voltage - minimum | Installation style | Factory packaging quantity | unit weight | GBP-gain bandwidth product | SR - Conversion rate | Vos - Input Bias Voltage | Working power supply current | Power type | Dual supply voltage | Maximum dual supply voltage | Minimum dual supply voltage | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | |
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GET PRICE |
11,150
In-stock
|
onsemi | MOSFET 30V Dual SyncFET | 16 V, 20 V | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | 4.9 mm | 3.9 mm | 1.75 mm | 2 W | Dual | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | Enhancement | 4.5 ns, 5 ns | 2.5 ns, 11 ns | 2 N-Channel | 20 ns, 25 ns | 7 ns, 8 ns | |||||||||||||||||||||||||||||||
|
GET PRICE |
45,000
In-stock
|
Toshiba Semiconductor | MOSFET | 12 V | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns | |||||||||||||||||||||||||||||||||||
|
GET PRICE |
22,500
In-stock
|
onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | SMD/SMT | 2500 | 338 mg | 30 V | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns | |||||||||||||||||||||||||||||||
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350
In-stock
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Texas instruments | Operational Amplifiers - Op Amps DUAL OP AMP | - 55 C | + 125 C | 2 Channel | 9.6 mm | 6.67 mm | 4.57 mm | Bipolar | Rail-to-Rail | 30 mA | 150 nA | Negative Rail to Positive Rail - 1.5 V | 70 dB to 80 dB | 100 dB | High Gain Amplifier | 40 nV/sqrt Hz | Tube | 32 V | 3 V | Through Hole | 1 | 700 kHz | 0.3 V/us | 5 mV | 350 uA | Single, Dual | +/- 3 V, +/- 5 V, +/- 9 V | +/- 16 V | +/- 1.5 V |